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AUIRF7665S2TR/TR1
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
? V GS(th) / ? T J
gfs
R G(int)
I DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
100
–––
–––
3.0
–––
8.8
–––
–––
–––
0.10
51
4.0
-13
–––
3.5
–––
–––
–––
62
5.0
–––
–––
5.0
5
V
V/°C
m ?
V
mV/°C
S
?
μA
V GS = 0V, I D = 250μA
Reference to 25°C, I D = 1mA
V GS = 10V, I D = 8.9A
V DS = V GS , I D = 25μA
V DS = 25V, I D = 8.9A
V DS = 100V, V GS = 0V
–––
–––
250
V DS = 80V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
V GS = 20V
V GS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
Q g
Q gs1
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
8.3
1.9
13
–––
V DS = 50V
V GS = 10V
Q gs2
Q gd
Q godr
Q sw
Q oss
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
C oss
C oss
C oss eff.
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.77
3.2
2.4
4.0
4.7
3.8
6.4
7.1
3.6
515
110
30
530
70
115
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
nC
ns
pF
I D = 8.9A
See Fig. 11
V DS = 16V, V GS = 0V
V DD = 50V
I D = 8.9A
R G = 6.8 ?
V GS = 10V
V GS = 0V
V DS = 25V
? = 1.0MHz
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 80V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 80V
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
33
38
14.4
58
1.3
–––
–––
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 8.9A, V GS = 0V
T J = 25°C, I F = 8.9A, V DD = 25V
di/dt = 100A/μs
? Surface mounted on 1 in. square Cu
(still air).
Notes ? through ? are on page 11
2
? Mounted to a PCB with small
clip heatsink (still air)
? Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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